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Yb:YAG Laser Crystal
Ytterbium-doped YAG (Yb:YAG) is regarded as the preferred option for the design Of high-power, diode-pumped solid state lasers, owning to Yb:YAG's broad 18nm wide absorption band near 940 nm and 1ms long lifetime of its emission state. Yb:YAG can also be pumped by reliable InGaAs laser diodes at 969 nm, however, the bandwidth in this case is significantly narrower compared to that at 940 nm.

The Yb3+ ion has simple electronic structure[xe]4f13. There exists only ground state 2F7/2 and excited state 2F5/2. The lack of higher 4f excited state leads to Yb:YAG being devoid of excited state absorption, upconversion or low-concentration quenching even at high doping concentrations of Yb3+ ions. Furthuermore, Yb:YAG has large fluorescence lifetime linked to a lower emission cross section, and high quantum efficiency linked to a small spectral separation between the lower laser level and the ground level.

The closeness of the lower laser energy level to the ground state on the opposite end significantly increase the population of lower laser energy level through thermal exitation, in contrast to Nd:YAG. Consequently, Yb:YAG is not an ideal material choice for high-power ns-pulse Q-switched lasers. Conversely, Yb:YAG is more suitable for qusi-cw operation at lower temperture, as this allows the Yb3+ ions sufficient time to return to the ground state, thereby alleviating the impacts of thermal excitation. Bruesselbach et al. reported that Yb:YAG lasers operating in quasi-cw mode can indeed achieve average power levels in the kilowatt range.
Properties of Yb:YAG
Chemical Formula:
Yb:Y3Al5O12Crystal Structure:
CubicLattice Constants:
12.01ÅMelting Point:
1970°CDensity:
4.56 g/cm³Mohs Hardness:
8.5Specific Heat:
0.59 J/g.cm³Modulus of Elasticity:
310 GpaYoung's Modulus:
3.17X104 Kg/mm2Poisson Ratio:
0.3 (est.)Tensile Strength:
0.13~0.26 GPaThermal Expansion Coefficient:
7.8 x 10-6/K [111], 0-250°CThermal Conductivity:
14 W/m /K @20°C, 10.5 W /m /K @100°CYb:YAG Optical Properties
Refractive Index:
1.82 @1064 nmLasing Wavelength:
1030 nmEmission Linewidth:
9 nmStimulated Emission Cross Section:
2.2 x 10-20 < cm²Absorption Bands:
941 nm, 968.5 nmAbsorption bandwidth:
18nm for 940nm, 2nm for 969nmIntrinsic Flouresence Lifetime (< 15% Yb doping):
967 μsLoss Coefficient:
0.003 /cm @ 1064 nmThermal Optical Coeff. (dn/dT):
9x10-6/°CSellmeier equation( λ in μm):
n2=2.08745+1.2081 λ2/(λ2-0.02119 )+17.2049 λ2/(λ2-1404.45)